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rev 1 november 2005 1/12 12 STGP10NB60SD n-channel 10a - 600v - to-220 low drop powermesh? igbt general features high current capability high input impedance (voltage driven) description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding performances. the suffix "s" identifies a family optimized achieve minimum on-voltage drop for low frequency application (<1khz). applications light dimmer static relays motor control order codes internal schematic diagram type v ces v ce(sat) (max)@ 25c i c @100c STGP10NB60SD 600v < 1.7v 10a 1 2 3 to-220 sales type marking package packaging STGP10NB60SD gp10nb60sd to-220 tube www.st.com
1 electrical ratings STGP10NB60SD 2/12 1 electrical ratings table 1. absolute maximum ratings table 2. thermal resistance symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v i c note 5 collector current (continuous) at t c = 25c 20 a i c note 5 collector current (continuous) at t c = 100c 10 a i cm note 1 collector current (pulsed) 80 w v ge gate-emitter voltage 20 a p tot total dissipation at t c = 25c 31.5 w t stg storage temperature ? 65 to 150 c t j operating junction temperature rthj-case thermal resistance junction-case max 4.7 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-sink thermal resistance case-sink typ 0.5
STGP10NB60SD 2 electrical characteristics 3/12 2 electrical characteristics (t case = 25 c unless otherwise specified) table 3. static table 4. dynamic symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250a, v ge = 0 600 v v br(ces) collector-emitter breakdown voltage i c = 1ma, v ge = 0 20 v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 5a v ge = 15v, i c = 10a v ge =15v, i c = 10a, tc= 125c 1.15 1.35 1.25 1.7 v v v v ge(th) gate threshold voltage v ce = v ge , i c = 250a 2.5 5 v i ces collector cut-off current (v ge = 0) v ce = max rating,t c = 25c v ce =max rating,t c = 125c 10 100 a a i ges gate-emitter leakage current (v ce = 0) v ge = 20v , v ce = 0 100 na g fs forward transconductance v ce = 25v , i c = 10a 5s symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25v, f = 1mhz, v ge = 0 610 65 12 pf pf pf q g total gate charge v ce = 400v, i c = 5a, v ge = 15v, (see figure 17) 33 nc i cl latching current v clamp =480v, rg=1k ? tj=125c 20 a
2 electrical characteristics STGP10NB60SD 4/12 table 5. switching on/off (inductive load) table 6. switching energy (inductive load) table 7. collector-emitter diode (1)pulse width limited by max. junction temperature (2) pulsed: pulse duration = 300 s, duty cycle 1.5% (3)eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. if the igbt is offered in a package w ith a co-pak diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25c and 125c) (4) turn-off losses include also the tail of the collector current (5) calculated according to the iterative formula: symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 480v, i c = 10a r g = 1k ? , v ge = 15v, tj= 25c (see figure 18) 0.7 0.46 8 ns ns a/s t c t r (v off ) t f cross-over time off voltage rise time current fall time v cc = 480v, i c = 10a r g = 1k ? , v ge = 15v,tj= 25c (see figure 18) 2.2 1.2 1.2 s s s t c t r (v off ) t f cross-over time off voltage rise time current fall time v cc = 480v, i c = 10a r g = 1k ? , v ge = 15v, tj=125c (see figure 18) 3.8 1.2 1.9 s s s symbol parameter test conditions min. typ. max. unit eon note 3 e off note 4 e ts turn-on switching losses turn-off switching losses total switching losses v cc = 480v, i c = 10a r g =1k ? , v ge = 15v, tj= 25c (see figure 18) 0.6 5.0 5.6 mj mj mj symbol parameter test conditions min. typ. max. unit i f i fm forward current forward current pulsed 7 56 a a v f forward on-voltage i f = 3.5a i f = 3.5a, tj = 125c 1.4 1.15 1.9 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 7a ,v r = 35v, tj =125c, di/dt = 100a/ s (see figure 19) 50 70 2.7 ns nc a i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () -------------------------------------------------------------------------------------------------- =
STGP10NB60SD 2 electrical characteristics 5/12 2.1 electrical characteristics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. transconductance figure 6. collector-emitter on voltage vs temperature
2 electrical characteristics STGP10NB60SD 6/12 figure 7. collector-emitter on voltage vs collector current figure 8. gate threshold voltage vs temperature figure 9. capacitance variations figure 10. gate charge vs gate-emitter vo ltag e figure 11. switching losses vs gate resistance figure 12. switching losses vs collector current
STGP10NB60SD 2 electrical characteristics 7/12 figure 13. switching losses vs temperature figure 14. normalized breakdown voltage vs temperature figure 15. emitter-collector diode characteristics
3 test circuits STGP10NB60SD 8/12 3 test circuits figure 16. test circuit for inductive load switching figure 17. gate charge test circuit figure 18. switching waveform figure 19. diode recovery time waveform
STGP10NB60SD 4 package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
4 package mechanical data STGP10NB60SD 10/12 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
STGP10NB60SD 5 revision history 11/12 5 revision history date revision changes 18-nov-2005 1 initial release.
5 revision history STGP10NB60SD 12/12 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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